DESCRIPTION
THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16.
   
FEATURES
• Single 3.0V to 3.6V power supply
• All device pins are compatible with LVTTL interface
• JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin
    pitch
• All inputs and outputs referenced to positive edge of system
    clock
• Data mask function by UDQM/LDQM
• Internal two banks operation
• Auto refresh and self refresh
• 4096 refresh cycles / 64ms
• Programmable Burst Length and Burst Type
    - 1, 2, 4, 8 and Full Page for Sequence Burst
    - 1, 2, 4 and 8 for Interleave Burst
• Programmable CAS Latency ; 1, 2, 3 Clocks