PTVA043502EC Datenblatt(PDF) - Cree, Inc

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PTVA043502EC Datenblatt (PDF) - Cree, Inc

PTVA043502EC Datasheet PDF - Cree, Inc


Teilenummer	PTVA043502EC

Download	PTVA043502EC Download

Filegröße	489.93 Kbytes

Page	11 Pages

Hersteller	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Bauteilbeschribung

Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 - 860 MHz

PTVA043502EC Datasheet (PDF)

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PTVA043502EC Datasheet PDF - Cree, Inc


Teilenummer	PTVA043502EC

Download	PTVA043502EC Click to download

Filegröße	489.93 Kbytes

Page	11 Pages

Hersteller	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Bauteilbeschribung	Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 - 860 MHz

PTVA043502EC Datenblatt (HTML) - Cree, Inc

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Ähnliche Teilenummer - PTVA043502EC

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Infineon Technologies A...	PTVA043502EC	1Mb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 ??860 MHz Rev. 02.2, 2017-02-09

Ähnliche Beschreibung - PTVA043502EC

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Infineon Technologies A...	PTFA043002E	305Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 ??860 MHz Rev. 03.1, 2009-02-20
	PTVA123501EFC	1Mb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 ??1400 MHz Rev. 05.1, 2016-04-26
	PTVA042502EFC	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 ??806 MHz Rev. 03.1, 2016-04-19
	PTFB182503EFL	694Kb / 12P	Thermally-Enhanced High Power RF LDMOS FETs Rev. 07.2, 2016-06-10
	PTFA080551EF	4Mb / 11P	Thermally-Enhanced High Power RF LDMOS FETs Rev. 04.1, 2016-06-16
	PTVA043502EC	1Mb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 ??860 MHz Rev. 02.2, 2017-02-09
Cree, Inc	PTVA123501EC	753Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 ??1400 MHz
	PTVA047002EV	449Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 ??806 MHz
	PTVA042502EC	560Kb / 10P	Thermally-Enhanced High Power RF LDMOS FETs 250 W, 50 V, 470 - 806 MHz
WOLFSPEED, INC.	PTVA047002EV	423Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 – 806 MHz Rev. 05, 2018-08-20

Über Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.

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