PXAC200902FC Datenblatt(PDF) - Cree, Inc

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PXAC200902FC Datenblatt (PDF) - Cree, Inc

PXAC200902FC Datasheet PDF - Cree, Inc


Teilenummer	PXAC200902FC

Download	PXAC200902FC Download

Filegröße	600.57 Kbytes

Page	10 Pages

Hersteller	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Bauteilbeschribung

Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 - 2170 MHz

PXAC200902FC Datasheet (PDF)

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PXAC200902FC Datasheet PDF - Cree, Inc


Teilenummer	PXAC200902FC

Download	PXAC200902FC Click to download

Filegröße	600.57 Kbytes

Page	10 Pages

Hersteller	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Bauteilbeschribung	Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 - 2170 MHz

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Ähnliche Teilenummer - PXAC200902FC

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Infineon Technologies A...	PXAC200902FC	489Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 ??2170 MHz Rev. 02.1, 2016-02-11

Ähnliche Beschreibung - PXAC200902FC

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Infineon Technologies A...	PXAC182002FC	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz Rev. 02.3, 2016-06-17
	PXAC200902FC	489Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 ??2170 MHz Rev. 02.1, 2016-02-11
	PXAC210552FC	206Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 02, 2015-12-04
	PXAC210552MD	466Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 03.1, 2017-01-25
	PXAC210552ND	466Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 04.1, 2017-01-09
Cree, Inc	PXAE184408NB	1Mb / 6P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 28 V, 1805 ??1880 MHz
	PXAC182002FC	495Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
	PXAC210552FC	600Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz
	PTAC210802FC	719Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 1805 ??2170 MHz
WOLFSPEED, INC.	PXAC210552FC	702Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28

Über Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.

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