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IR21531 Datenblatt (PDF) - Infineon Technologies AG

IR21531 Datasheet PDF - Infineon Technologies AG
Teilenummer IR21531
Download  IR21531 Download
Filegröße   223.44 Kbytes
Page   9 Pages
Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG
Bauteilbeschribung SELF-OSCILLATING HALF-BRIDGE DRIVER

IR21531 Datasheet (PDF)

Go To PDF Page Download Datenblatt
IR21531 Datasheet PDF - Infineon Technologies AG

Teilenummer IR21531
Download  IR21531 Click to download

Filegröße   223.44 Kbytes
Page   9 Pages
Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG
Bauteilbeschribung SELF-OSCILLATING HALF-BRIDGE DRIVER

IR21531 Datenblatt (HTML) - Infineon Technologies AG


IR21531 Produktdetails

Description
The IR21531D(S) are an improved version of the popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.

Features
• Integrated 600V half-bridge gate driver
• 15.6V zener clamp on Vcc
• True micropower start up
• Tighter initial deadtime control
• Low temperature coefficient deadtime
• Shutdown feature (1/6th Vcc) on CT pin
• Increased undervoltage lockout Hysteresis (1V)
• Lower power level-shifting circuit
• Constant LO, HO pulse widths at startup
• Lower di/dt gate driver for better noise immunity
• Low side output in phase with RT
• Internal 50nsec (typ.) bootstrap diode (IR21531D)
• Excellent latch immunity on all inputs and outputs
• ESD protection on all leads
• Also available LEAD-FREE




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Über Infineon Technologies AG


Infineon Technologies ist ein führender globaler Halbleiterhersteller, der sich auf die Bereitstellung von Leistungsmanagement-, Sicherheits- und Kontrolllösungen für eine Vielzahl von Branchen wie Automobil-, Industrie- und Kommunikationssystemen spezialisiert hat.
Das Unternehmen wurde 1999 gegründet und hat seinen Hauptsitz in Neubiberg.
Infineon bietet eine breite Palette von Produkten, darunter Mikrocontroller, Power -Halbleiter, Sensoren und andere integrierte Schaltungen.
Das Unternehmen ist auf dem globalen Markt stark vertreten, mit Betrieb und Einrichtungen in verschiedenen Ländern auf der ganzen Welt.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.




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