Plastic Medium−Power Complementary Silicon Transistors

Designed for general−purpose amplifier and low−speed switching applications.

Features
•High DC Current Gain −hFE = 2500 (Typ) @ IC= 4.0 Adc
•Collector−Emitter Sustaining Voltage − @ 30 mAdc
                VCEO(sus)= 60 Vdc (Min) − TIP100, TIP105
                             = 80 Vdc (Min) − TIP101, TIP106
                             = 100 Vdc (Min) − TIP102, TIP107
•Low Collector−Emitter Saturation Voltage − VCE(sat)= 2.0 Vdc (Max) @ IC
                                                         = 3.0 Adc
                                                       = 2.5 Vdc (Max) @ IC= 8.0 Adc
•Monolithic Construction with Built−in Base−Emitter Shunt Resistors
•Pb−Free Packages are Available