TRANSISTOR INVERTER
INVERTERS FOR AIR CONDITIONER
IGBT GATE DRIVE
POWER MOS FET GATE DRIVE

The TOSHIBA TLP250(INV) consists of a GaAlAs light emitting diode and a integrated photodetector.
This unit is 8-lead DIP.
TLP250(INV) is suitable for gate driving circuit of IGBT or power MOS FET.

● Input Threshold Current : IF=5mA(MAX)
● Supply Current(ICC) : 11mA(MAX)
● Supply Voltage(VCC) : 10~35V
● Output Current(IO) : ±2.0A(MAX)
● Switching Time(tpLH/tpHL) : 0.5µs(MAX)
● Isolation Voltage : 2500Vrms
● UL Recognized : UL1577,File No.E67349
● Option(D4)
   VDE Approved : DIN VDE0884/06.92 Certificate No.76823
   Maximum Operating Insulation Voltage : 630VPK
   Highest Permissible Over Voltage : 4000VPK
   (Note):When a VDE0884 approved type is needed,
              Please designate the “Option(D4)”
● Creepage Distance : 6.4mm(MIN)
   Clearance : 6.4mm(MIN)