General Description
The VP0106 low-threshold Enhancement-mode
(normally-off) transistors use a vertical DMOS structure
and a well-proven silicon-gate manufacturing process.
This combination produces a device with the power
handling capabilities of bipolar transistors and the high
input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal
runaway and thermally induced secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance,
and fast switching speeds are desired.

Features
• Free from Secondary Breakdown
• Low Power Drive Requirement
• Ease of Paralleling
• Low CISS and Fast Switching Speeds
• Excellent Thermal Stability
• Integral Source-Drain Diode
• High Input Impedance and High Gain

Applications
• Motor Controls
• Converters
• Amplifiers
• Switches
• Power Supply Circuits
• Drivers (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)