FEATURES
• Low switch on-resistance (1 Ω)
• 1.65 V to 5.5 V single supply operation
• Isolation in powered-off mode
• Control logic inputs can go over V+
• Low charge injection (5 pC)
• Low total harmonic distortion
• Break before make switching
• Latch-up performance exceeds 300 mA per JESD 78
• ESD tested
- 7000 V human body model (JS-001)
- 1000 V charge device model (JS-002)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details

APPLICATIONS
• Smartphones and tablets
• Consumer and computing
• Portable instrumentation
• Medical equipment

DESCRIPTION
The DG2012E is a high performance single-pole,
double-throw (SPDT) analog switch designed for 1.8 V to
5.5 V operation with a single power rail.
Fabricated with high density CMOS technology, the device
achieves low on resistance of 1 Ω at a 5 V power supply, low
power consumption, and fast switching speeds.
The DG2012E can handle both analog and digital signals
and permits signals with amplitudes of up to V+ to be
transmitted in either direction. Its control logic inputs can go
over V+ up to 5.5 V. It features break before make switching
performance. Its -3 dB bandwidth is typically 160 MHz.
A powered-off protection circuit is built into the switch to
prevent an abnormal current flow from COM pin to V+ during
the power-down condition. Each output pin can withstand
greater than 7 kV (human body model).
Operation temperature is specified from -40 °C to +85 °C.
The DG2012E is available in SC-70-6L package.