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ALD1115 Datenblatt (PDF) - ADL Embedded Solutions

ALD1115 Datasheet PDF - ADL Embedded Solutions
Teilenummer ALD1115
Download  ALD1115 Download
Filegröße   70.62 Kbytes
Page   8 Pages
Hersteller  ADL [ADL Embedded Solutions]
Direct Link  http://www.adl-usa.com
Logo ADL - ADL Embedded Solutions
Bauteilbeschribung COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET

ALD1115 Datasheet (PDF)

Go To PDF Page Download Datenblatt
ALD1115 Datasheet PDF - ADL Embedded Solutions

Teilenummer ALD1115
Download  ALD1115 Click to download

Filegröße   70.62 Kbytes
Page   8 Pages
Hersteller  ADL [ADL Embedded Solutions]
Direct Link  http://www.adl-usa.com
Logo ADL - ADL Embedded Solutions
Bauteilbeschribung COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET

ALD1115 Datenblatt (HTML) - ADL Embedded Solutions


ALD1115 Produktdetails

GENERAL DESCRIPTION
The ALD1115 is a monolithic complementary N-channel and P-channel
transistor pair intended for a broad range of analog applications. These
enhancement-mode transistors are manufactured with Advanced Linear
Devices' enhanced ACMOS silicon gate CMOS process. It consists of a
N-channel MOSFET and a P-channel MOSFET in one package. The
ALD1115 is a dual version of the quad complementary ALD1105.
The ALD1115 offers high input impedance and negative current temperature
coefficient. The transistor pair is designed for precision signal
switching and amplifying applications in +1V to +10V systems where low
input bias current, low input capacitance and fast switching speed are
desired. Since these are MOSFET devices, they feature very large
(almost infinite) current gain in a low frequency, or near DC, operating
environment. When connected in parallel with sources, drains and gates
connected together, a CMOS analog switch can be constructed. In
addition, the ALD1115 is intended as a building block for CMOS inverters,
differential amplifier input stages, transmission gates, and multiplexer
applications.
The ALD1115 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 100pA at room temperature. V+ is connected to the substrate,
which is the most positive voltage potential of the ALD1115, usually SP
(5). Similarly, V- is connected to the most negative voltage potential of the
ALD1115, usually SN (1).

FEATURES
• Thermal tracking between N-channel and P-channel
• Low threshold voltage of 0.7V for both N-channel and
P-channel MOSFETs
• Low input capacitance
• High input impedance -- 1013Ω typical
• Low input and output leakage currents
• Negative current (IDS) temperature coefficient
• Enhancement-mode (normally off)
• DC current gain 109
• Single N-channel MOSFET and single P-channel
MOSFET in one package

APPLICATIONS
• Precision current mirrors
• Complementary push-pull linear drives
• Discrete analog switches
• Analog signal choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog current inverter
• Precision matched current sources
• CMOS inverter stage
• Diode clamps
• Source followers




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