Description
The TC55B464P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 65,536 words by 4 bits and
operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
The TC55B464P/J features low power dissipation when the device is deselected using chip enable (CE).
The TC55B464P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and
outputs are TTL compatible.
The TC55B464P/J is available in a 300mil width, 24-pin DIP and SOJ suitable for high density surface assembly.

Features
• Fast access time
TC55B464P/J-10
- TC55B464P/J-12
• Low power dissipation
Operation:
TC55B464P/J-10
- TC55B464P/J-12
- Standby:
10ns (max.)
12ns (max.)
140mA (max.)
140mA (max.)
15mA (max.)
Single 5V power supply: 5V±10%
• Fully static operation
Inputs and outputs TTL compatible
• Package:
TC55B464P: DIP24-P-300B
TC55B464J: SOJ24-P-300A