Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 25 W with 15.7 dB gain @ 870 MHz /
13.6 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC European
directive

Description
The STAP85025 is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 13.6 V in common source mode at
frequencies of up to 1 GHz. STAP85025 boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in STAP ST
advanced PowerSO-10RF package.
STAP85025’s superior linearity performance
makes it an ideal solution for car mobile radio.
The STAP ST plastic package was designed to
offer high reliability and high power capability.
It has been specially optimized for RF needs and
offers excellent RF performances and ease of
assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)