Features
■ High speed switching
■ Tight parameter distribution
■ Safe paralleling
■ Low thermal resistance
■ 6 μs short-circuit withstand time
■ Lead free package

Applications
■ Photovoltaic inverters
■ Uninterruptible power supply
■ Welding
■ Power factor correction
■ High switching frequency converters

Description
Using advanced proprietary trench gate and field
stop structure, this IGBT leads to an optimized
compromise between conduction and switching
losses maximizing the efficiency for high
switching frequency converters. Furthermore, a
slightly positive VCE(sat) temperature coefficient
and a very tight parameter distribution result in an
easier paralleling operation.