MS1503 Datenblatt(PDF) - Advanced Power Technology

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MS1503 Datenblatt (PDF) - Advanced Power Technology

MS1503 Datasheet PDF - Advanced Power Technology


Teilenummer	MS1503

Download	MS1503 Download

Filegröße	99.24 Kbytes

Page	3 Pages

Hersteller	ADPOW [Advanced Power Technology]

Direct Link	http://www.advpowertech.com

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Bauteilbeschribung

RF & MICROWAVE TRANSISTORS WIDE BAND VHF/UHF APPLICATIONS

MS1503 Datasheet (PDF)

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MS1503 Datasheet PDF - Advanced Power Technology


Teilenummer	MS1503

Download	MS1503 Click to download

Filegröße	99.24 Kbytes

Page	3 Pages

Hersteller	ADPOW [Advanced Power Technology]

Direct Link	http://www.advpowertech.com

Logo

Bauteilbeschribung	RF & MICROWAVE TRANSISTORS WIDE BAND VHF/UHF APPLICATIONS

MS1503 Datenblatt (HTML) - Advanced Power Technology

MS1503 Datasheet HTML 1Page - Advanced Power Technology

MS1503 Datasheet HTML 2Page - Advanced Power Technology

MS1503 Datasheet HTML 3Page - Advanced Power Technology

MS1503 Produktdetails

DESCRIPTION:
The MS1503 is a 28V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. The device utilizes diffused emitter resistors to achieve infinite VSWR capability under operating conditions. Internal inpedance matching produces optimum power gain and efficiency over the 225-400MHz band.

Features
• 400 MHz
• 28 VOLTS
• GOLD METALIZATION
• POUT = 100 WATTS
• GP = 7.0 dB GAIN MINIMUM
• COMMON EMITTER CONFIGURATION

Ähnliche Teilenummer - MS1503

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List of Unclassifed Man...	MS150	233Kb / 2P	Power Film Resistors
Caddock Electronics, In...	MS150	400Kb / 2P	Type MS Power Film Resistors
Advanced Power Technolo...	MS1501	97Kb / 3P	RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS
Advanced Power Technolo...	MS1502	97Kb / 3P	RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS
Microsemi Corporation	MS1504	173Kb / 4P	RF & MICROWAVE TRANSISTORS

Ähnliche Beschreibung - MS1503

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
STMicroelectronics	SD1463	36Kb / 3P	RF & MICROWAVE TRANSISTORS VHF/UHF APPLICATIONS 23-Aug-1996
STMicroelectronics	SD1480	78Kb / 6P	RF & MICROWAVE TRANSISTORS VHF APPLICATIONS 20-Jun-1994
Toshiba Semiconductor	TA4000F	140Kb / 4P	VHF~UHF WIDE BAND AMPLIFIER APPLICATIONS
Microsemi Corporation	2N3375	609Kb / 5P	RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND
Advanced Power Technolo...	SD1013-03	113Kb / 3P	RF & MICROWAVE TRANSISTORS VHF APPLICATIONS
Toshiba Semiconductor	TA4022F	236Kb / 8P	VHF-UHF Wide Band Amplifier Applications
	TA4023F	249Kb / 8P	VHF-UHF Wide Band Amplifier Applications
	JDP3C13U	144Kb / 3P	UHF~VHF Band RF Switch Applications
	1SV237TE85LF	125Kb / 3P	VHF~UHF Band RF Attenuator Applications
	JDP2S02ACT	146Kb / 4P	UHF-VHF Band RF Switch Applications

Über Advanced Power Technology

Advanced Power Technology (APT) is a semiconductor company that designs, manufactures and sells power MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). The company was founded in 1986 and is headquartered in Bend, Oregon, USA.

APT's products are used in a wide range of applications, including automotive, industrial, communications, and consumer electronics. The company offers a wide range of MOSFETs and IGBTs with different voltage and current ratings, package options and other features to meet the specific needs of its customers.

APT is known for its commitment to quality and innovation. The company's products are designed to meet the highest standards of performance and reliability, and are manufactured using the latest technology and materials. APT also offers custom design and engineering services to meet the specific needs of its customers.

APT has a global presence, with sales offices and representatives located around the world. The company is dedicated to delivering innovative and reliable power MOSFETs and IGBTs that meet the evolving needs of the electronics industry. In 2000, APT was acquired by Microsemi Corporation, which later became part of Microchip Technology Inc.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.

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