PNP SILICON EPITAXIAL TRANSISTOR
MINI MOLD

FEATURES
• Complementary to 2SC1623
• High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA)
• High Voltage: VCEO = −50 V
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage VCBO −60 V
Collector to Emitter Voltage VCEO −50 V
Emitter to Base Voltage VEBO −5.0 V
Collector Current (DC) IC −100 mA
Total Power Dissipation PT 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg −55 to +150 °C