P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING

DESCRIPTION
The 2SJ462 is a switching device which can be driven directly
by an IC operating at 3 V.
The 2SJ462 features a low on-state resistance and can be
driven by a low voltage power source, so it is suitable for applications
such as power management.

FEATURES
• Can be driven by a 2.5 V power source.
• New-type compact package.
Has advantages of packages for small signals and for power
transistors, and compensates those disadvantages.
• Low on-state resistance.
RDS(ON) : 0.29 W MAX. @VGS = –2.5 V, ID = –0.5 A
RDS(ON) : 0.19 W MAX. @VGS = –4.0 V, ID = –1.0 A