MJD31C Datenblatt(PDF)

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MJD31C Datenblatt (PDF) - Nexperia B.V. All rights reserved

MJD31C Datasheet PDF - Nexperia B.V. All rights reserved


Teilenummer	MJD31C

Download	MJD31C Download

Filegröße	230.43 Kbytes

Page	11 Pages

Hersteller	NEXPERIA [Nexperia B.V. All rights reserved]

Direct Link	https://www.nexperia.com/

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Bauteilbeschribung

100 V, 3 A NPN high power bipolar transistor

MJD31C Datasheet (PDF)

Download Datenblatt


Teilenummer	MJD31C

Download	MJD31C Click to download

Filegröße	230.43 Kbytes

Page	11 Pages

Hersteller	NEXPERIA [Nexperia B.V. All rights reserved]

Direct Link	https://www.nexperia.com/

Logo

Bauteilbeschribung	100 V, 3 A NPN high power bipolar transistor

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MJD31C Produktdetails

1. General description
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device
(SMD) plastic package.
PNP complement: MJD32C

2. Features and benefits
• High thermal power dissipation capability
• High energy efficiency due to less heat generation
• Electrically similar to popular MJD31 series
• Low collector emitter saturation voltage
• Fast switching speeds

3. Applications
• Power management
• Load switch
• Linear mode voltage regulator
• Constant current drive backlighting application
• Motor drive
• Relay replacement

Ähnliche Beschreibung - MJD31C

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
NXP Semiconductors	PHPT61006NY	239Kb / 15P	100 V, 6 A NPN high power bipolar transistor 26 January 2015
NXP Semiconductors	PHPT61010NY	242Kb / 16P	100 V, 10 A NPN high power bipolar transistor 20 March 2015
Nexperia B.V. All right...	PHPT61003NY	732Kb / 17P	100 V, 3 A NPN high power bipolar transistor
	PHPT61002NYCLH	249Kb / 15P	100 V, 2 A NPN high power bipolar transistor
	MJD31CH-Q	226Kb / 11P	100 V, 3 A NPN high power bipolar transistor 18 May 2021
	MJD41C	229Kb / 11P	100 V, 6 A NPN high power bipolar transistor 10 May 2021
	MJD41C-Q	222Kb / 10P	100 V, 6 A NPN high power bipolar transistor 17 May 2021
	MJD31CA	231Kb / 11P	100 V, 3 A NPN high power bipolar transistor 23 November 2020
	PHPT61006NY	717Kb / 15P	100 V, 6 A NPN high power bipolar transistor 26 January 2015
	PHPT61010NY	720Kb / 16P	100 V, 10 A NPN high power bipolar transistor 20 March 2015

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