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AT25XE041D Datenblatt (PDF) - Renesas Technology Corp

AT25XE041D Datasheet PDF - Renesas Technology Corp
Teilenummer AT25XE041D
Download  AT25XE041D Download
Filegröße   2249.7 Kbytes
Page   119 Pages
Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Bauteilbeschribung 4-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support

AT25XE041D Datasheet (PDF)

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AT25XE041D Datasheet PDF - Renesas Technology Corp

Teilenummer AT25XE041D
Download  AT25XE041D Click to download

Filegröße   2249.7 Kbytes
Page   119 Pages
Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Bauteilbeschribung 4-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support

AT25XE041D Datenblatt (HTML) - Renesas Technology Corp


AT25XE041D Produktdetails

Features
▪ Voltage Range: 1.65 V - 3.6 V
▪ 4-Mbit Flash Memory
▪ Flexible 256-byte page erase architecture
▪ Serial Peripheral Interface (SPI) compatible
• Supports SPI modes 0 and 3
• Supports SPI single mode operation (1-1-1)
• Supports dual output operation (1-1-2)
• Supports quad output operation (1-1-4)
• Supports quad XiP operation (1-4-4 and
0-4-4)
▪ 133 MHz maximum operating frequency: Clock-tooutput of 8 ns
▪ Flexible, optimized erase architecture for code
and data storage applications
• Uniform 256-Byte page erase
• Uniform 4-kByte block erase
• Uniform 32-kByte block erase
• Uniform 64-kByte block erase
• Full chip erase
▪ Flexible non-volatile block protection
▪ 1 x 128-byte factory-programmed unique identifier
▪ 3 x 128-byte, One Time Programmable (OTP)
security registers
▪ Flexible programming
• Byte/Page program (1 to 256 Bytes)
• Single command page buffer direct ReadModify-Write (page write with inclusive erase)
• Flexible 256-byte SRAM page buffer
operation
• Sequential program mode capability
▪ Software controlled Reset and Terminate
commands
▪ Erase program suspend resume
▪ Hardware reset option (through the HOLD pin)
▪ JEDEC hardware reset
▪ Low-battery detect circuit
▪ Active interrupt device status capability
▪ Non-volatile status register configuration option
▪ JEDEC standard manufacturer and device ID read
methodology
▪ Serial Flash Discoverable Parameters (SFDP)
version 1.6
▪ Low power dissipation:
• 30 µA standby current (typical)
• 8.5 µA Deep Power-Down (DPD) current
(typical)
• 7 nA Ultra Deep Power Down (UDPD) current
(typical)
• 8.5 mA active read current (1-1-1 — 104 MHz)
• 8.5 mA program current
• 9.6 mA erase current
▪ User-configurable and auto I/O pin drive levels
▪ Endurance: 100,000 program/erase cycles
▪ Data Retention: 20 years
▪ -40 oC to +85 oC operation
▪ Industry standard green (Pb/Halide-free/RoHS
Compliant) Package Options
• 8-lead SOIC (150-mil)
• 8-lead SOIC (208-mil)
• 8-pad Ultra-thin DFN (2 x 3 x 0.6 mm)
• 8-ball WLCSP (3 x 2 x 3 ball matrix)
• Die/Wafer — Contact Renesas Electronics for
more information




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Über Renesas Technology Corp


Renesas Technology Corp ist ein japanisches Halbleiterunternehmen, das eine breite Palette von Mikrocontrollern, System-auf-Chips sowie Analog- und Stromversorgungsgeräten für verschiedene Anwendungen in den Märkten Automobil-, Industrie- und Verbrauchermärkte bietet.
Das Unternehmen wurde 2010 durch die Fusion der NEC Electronics Corporation und der Renesas Technology Corporation gegründet.
Renesas ist einer der größten Mikrocontroller -Lieferanten der Welt und ist bekannt für sein Fachwissen in der Entwicklung fortschrittlicher Technologien in Bereichen wie dem Internet of Things (IoT), künstlicher Intelligenz (KI) und Automobilelektronik.
Das Unternehmen hat in über 20 Ländern betrieben und seine Produkte werden in einer Vielzahl von Anwendungen verwendet.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.




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