Features
• High-Voltage Types (20V Rating)
• Propagation Delay Time = 60ns (typ.) at CL = 50pF,
VDD = 10V
• Buffered Inputs and Outputs
• Standardized Symmetrical Output Characteristics
• Maximum Input Current of 1A at 18V Over Full PackageTemperature Range; 100nA at 18V and +25oC
• 100% Tested for Maximum Quiescent Current at 20V
• 5V, 10V and 15V Parametric Ratings
• Noise Margin (Over Full Package Temperature Range):
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• Meets All Requirements of JEDEC Tentative Standards
No. 13B, “Standard Specifications for Description of
“B” Series CMOS Device’s
Description
CD4011BMS, CD4012BMS, and CD4023BMS NAND gates
provide the system designer with direct implementation of
the NAND function and supplement the existing family of
CMOS gates. All inputs and outputs are buffered.
The CD4011BMS, CD4012BMS and the CD4023BMS is
supplied in these 14 lead outline packages:
CD4011BMS - Quad 2 Input
CD4012BMS - Dual 4 Input
CD4023BMS - Triple 3 Input
CD4011B CD4012B CD4023B
Braze Seal DIP H4Q H4H H4Q
Frit Seal DIP H1B H1B H1B
Ceramic Flatpack H3W H3W H3W