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SLG59M1746C Datenblatt (PDF) - Renesas Technology Corp

SLG59M1746C Datasheet PDF - Renesas Technology Corp
Teilenummer SLG59M1746C
Download  SLG59M1746C Download
Filegröße   1428.21 Kbytes
Page   33 Pages
Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Bauteilbeschribung An Ultra-low Power, RDSON 17.6 mΩ, 1 A, 0.82 mm2 WLCSP Load Switch with Controlled Inrush Current

SLG59M1746C Datasheet (PDF)

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SLG59M1746C Datasheet PDF - Renesas Technology Corp

Teilenummer SLG59M1746C
Download  SLG59M1746C Click to download

Filegröße   1428.21 Kbytes
Page   33 Pages
Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Bauteilbeschribung An Ultra-low Power, RDSON 17.6 mΩ, 1 A, 0.82 mm2 WLCSP Load Switch with Controlled Inrush Current

SLG59M1746C Datenblatt (HTML) - Renesas Technology Corp


SLG59M1746C Produktdetails

General Description
The SLG59M1746C is a high-performance 1 A capable,
single-channel load switch designed for high-side power
control applications up to 1 A. This feature-rich nFET load
switch has been optimized for all small form-factor, single-cell
Li-ion applications including smartphone, fitness bands, and
watches.
Operating from 2.7 V to 3.6 V supplies, the SLG59M1746C’s
RDSON is 17.6 mΩ and exhibits an input voltage range that
extends from 0.25 V to 1.5 V. The SLG59M1746C’s novel
nFET architecture achieves very low supply current operation,
controlled VIN inrush current profile, and world-class VIN range
to rival the performance of many general-purpose nFET and
pFET load switches on the market.
Using Renesas’s proprietary MOSFET IP, the SLG59M1746C
achieves a stable RDSON as a function of both the supply and
input voltages. Fully specified over the -40 °C to 85 °C
temperature range, this advanced nFET load switch is
available in 6-lead WLCSP measuring 0.71 mm x 1.16 mm x
0.5 mm with 0.35 mm pitch. The SLG59M1746C consumes
less than 1 µA after start up. There are no protection features
such as over temperature or over current shutdown, etc.
Features
• High-performance nFET Design:
• Low Typical RDSON: 17.6 mΩ
• Steady-state Operating Current: 1 A
• Small Inrush Current
• Very Low Supply current after startup: < 1µA
• Operating VDD Range: 2.7 V ≤ VDD ≤ 3.6 V
• Operating VIN Range: 0.25 V ≤ VIN ≤ 1.5 V
• Fast VOUT Discharge
• ON/OFF Control: Active HIGH
• Operating Temperature: -40 °C to 85 °C
• Pb-Free / Halogen-Free / RoHS compliant WLCSP
• 6 lead 0.71 mm x 1.16 mm, 0.35 mm pitch




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Über Renesas Technology Corp


Renesas Technology Corp ist ein japanisches Halbleiterunternehmen, das eine breite Palette von Mikrocontrollern, System-auf-Chips sowie Analog- und Stromversorgungsgeräten für verschiedene Anwendungen in den Märkten Automobil-, Industrie- und Verbrauchermärkte bietet.
Das Unternehmen wurde 2010 durch die Fusion der NEC Electronics Corporation und der Renesas Technology Corporation gegründet.
Renesas ist einer der größten Mikrocontroller -Lieferanten der Welt und ist bekannt für sein Fachwissen in der Entwicklung fortschrittlicher Technologien in Bereichen wie dem Internet of Things (IoT), künstlicher Intelligenz (KI) und Automobilelektronik.
Das Unternehmen hat in über 20 Ländern betrieben und seine Produkte werden in einer Vielzahl von Anwendungen verwendet.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.




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