1 Features
• Ultra-low noise:
– Voltage noise:
• 0.8 nV/√Hz at 1 kHz, IDS = 5 mA
• 0.9 nV/√Hz at 1 kHz, IDS = 2 mA
– Current noise: 1.8 fA/√Hz at 1 kHz
• Low gate current: 10 pA (max)
• Low input capacitance: 24 pF at VDS = 5 V
• High gate-to-drain and gate-to-source breakdown
voltage: –40 V
• High transconductance: 68 mS
• Packages: Small SC70 and SOT-23

2 Applications
• Microphone inputs
• Hydrophones and marine equipment
• DJ controllers, mixers, and other DJ equipment
• Professional audio mixer or control surface
• Guitar amplifier and other music instrument
amplifier
• Condition monitoring sensor

3 Description
The JFE150 is a Burr-Brown™ discrete JFET built
using Texas Instruments' modern, high-performance,
analog bipolar process. The JFE150 features
performance not previously available in older discrete
JFET technologies. The JFE150 offers the maximum
possible noise-to-power efficiency and flexibility,
where the quiescent current can be set by the user
and yields excellent noise performance for currents
from 50 μA to 20 mA. When biased at 5 mA, the
device yields 0.8 nV/√Hz of input-referred noise,
giving ultra-low noise performance with extremely
high input impedance (> 1 TΩ). The JFE150 also
features integrated diodes connected to separate
clamp nodes to provide protection without the addition
of high-leakage, nonlinear, external diodes.
The JFE150 can withstand a high drain-to-source
voltage of 40 V, as well as gate-to-source and gateto-
drain voltages down to –40 V. The temperature
range is specified from –40°C to +125°C. The device
is offered in 5-pin SOT-23 and SC70 packages.