Features
• Reference output voltage . . . . . . . . . . . . . . . . . 10.0V ±0.05%
• Accuracy over temperature . . . . . . . . . . . . . . . . . . . . . ±0.15%
• Accuracy over radiation . . . . . . . . . . . . . . . . . . . . . . . . ±0.25%
• Output voltage noise . . . . .14.8μVP-P typical (0.1Hz to 10Hz)
• Supply current . . . . . . . . . . . . . . . . . . . . . . . . . .300μA (typical)
• VOS temperature coefficient . . . . . . . . . . 6ppm/°C maximum
• Output current capability . . . . . . . . . . . . . . . . . . .10mA/-5mA
• Line regulation . . . . . . . . . . . . . . . . . . . . . . 5ppm/V maximum
• Load regulation (sourcing) . . . . . . . . . 15ppm/mA maximum
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation environment
- High dose rate (50 to 300rad(Si)/s) . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . .100krad(Si)*
- SEL/SEB free (VCC = 36V) . . . . . . . . . . . . 86MeV•cm2/mg
*Product capability established by initial characterization. The
“EH” version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.
• Electrically screened to SMD 5962-14208