PRODUCT DESCRIPTION
The SST39VF160x and SST39VF320x devices are 1M x16 and 2M x16, respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF160x/320x write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.
Featuring high performance Word-Program, the SST39VF160x/320x devices provide a typical Word-Program time of 7 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years.

FEATURES:
• Organized as
   1M x16: SST39VF1601/1602
   2M x16: SST39VF3201/3202
• Single Voltage Read and Write Operations
   – 2.7-3.6V
• Superior Reliability
   – Endurance: 100,000 Cycles (Typical)
   – Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
   – Active Current: 9 mA (typical)
   – Standby Current: 3 µA (typical)
   – Auto Low Power Mode: 3 µA (typical)
• Hardware Block-Protection/WP# Input Pin
   – Top Block-Protection (top 32 KWord)
      for SST39VF1602/3202
   – Bottom Block-Protection (bottom 32 KWord)
      for SST39VF1601/3201
• Sector-Erase Capability
   – Uniform 2 KWord sectors
• Block-Erase Capability
   – Uniform 32 KWord blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Security-ID Feature
   – SST: 128 bits; User: 128 bits
• Fast Read Access Time:
   – 70 ns
• Latched Address and Data
• Fast Erase and Word-Program:
   – Sector-Erase Time: 18 ms (typical)
   – Block-Erase Time: 18 ms (typical)
   – Chip-Erase Time: 40 ms (typical)
   – Word-Program Time: 7 µs (typical)
• Automatic Write Timing
   – Internal VPP Generation
• End-of-Write Detection
   – Toggle Bits
   – Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts and command sets
• Packages Available
   – 48-lead TSOP (12mm x 20mm)
   – 48-ball TFBGA (6mm x 8mm)
• All non-Pb (lead-free) devices are RoHS compliant