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P25Q80L-NXH-IR Datenblatt (PDF) - Puya Semiconductor Co., Ltd.

P25Q80L-NXH-IR Datasheet PDF - Puya Semiconductor Co., Ltd.
Teilenummer P25Q80L-NXH-IR
Download  P25Q80L-NXH-IR Download
Filegröße   2939.05 Kbytes
Page   70 Pages
Hersteller  PUYA [Puya Semiconductor Co., Ltd.]
Direct Link  http://www.puyasemi.com/index_en.html
Logo PUYA - Puya Semiconductor Co., Ltd.
Bauteilbeschribung Ultra Low Power, 8M-bit Serial Multi I/O Flash Memory Datasheet

P25Q80L-NXH-IR Datasheet (PDF)

Go To PDF Page Download Datenblatt
P25Q80L-NXH-IR Datasheet PDF - Puya Semiconductor Co., Ltd.

Teilenummer P25Q80L-NXH-IR
Download  P25Q80L-NXH-IR Click to download

Filegröße   2939.05 Kbytes
Page   70 Pages
Hersteller  PUYA [Puya Semiconductor Co., Ltd.]
Direct Link  http://www.puyasemi.com/index_en.html
Logo PUYA - Puya Semiconductor Co., Ltd.
Bauteilbeschribung Ultra Low Power, 8M-bit Serial Multi I/O Flash Memory Datasheet

P25Q80L-NXH-IR Datenblatt (HTML) - Puya Semiconductor Co., Ltd.


P25Q80L-NXH-IR Produktdetails

2 Description
The
P25Q80L is a serial interface Flash memory device designed for use in a wide variety of high volume
consume r based applications in which program code is shadowed from Flash memory into embedded or
external RAM for execution. The flexible erase architecture of the device, with its page erase granularity it is
ideal for data storage as well, eliminating the need for additional data storage devices.
The erase block sizes of the device have been optimized to meet the needs of today's code and data storage
applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently.
Be cause certain code modules and data storage segments must reside by themselves in their own erase
regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash
memory devices can be greatly reduced. This increased memory space efficiency allows additional code
routines and data storage segments to be added while still maintaining the same overall device density.
The device also contains an additional 3*512
byte security registers with OTP lock (One Time
Programmabl e), can be used for purposes such as unique device serialization, system level Electronic Serial
Number (ESN) storage, locked key storage, etc.
Specifically designed for use in many different systems, the device supports read, program, and erase
operation s with a wide supply voltage range of 1.65V to 2. 0 V. No separate voltage is required for
programming and erasing.




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