FEATURES
• Low on-state resistance
N-channel RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 3.4 A)
RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 3.4 A)
RDS(on)3 = 42 mΩ MAX. (VGS = 4.0 V, ID = 3.4 A)
P-channel RDS(on)1 = 36 mΩ MAX. (VGS = −10 V, ID = −2.9 A)
RDS(on)2 = 54 mΩ MAX. (VGS = −4.5 V, ID = −2.9 A)
RDS(on)3 = 65 mΩ MAX. (VGS = −4.0 V, ID = −2.9 A)
• Low input capacitance
N-channel Ciss = 760 pF TYP.
P-channel Ciss = 900 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)