PTRA087008NB-V1-R2 Datenblatt(PDF) - WOLFSPEED, INC.

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PTRA087008NB-V1-R2 Datenblatt (PDF) - WOLFSPEED, INC.

PTRA087008NB-V1-R2 Datasheet PDF - WOLFSPEED, INC.


Teilenummer	PTRA087008NB-V1-R2

Download	PTRA087008NB-V1-R2 Download

Filegröße	731.2 Kbytes

Page	11 Pages

Hersteller	WOLFSPEED [WOLFSPEED, INC.]

Direct Link	https://www.wolfspeed.com/

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Bauteilbeschribung

Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz

PTRA087008NB-V1-R2 Datasheet (PDF)

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PTRA087008NB-V1-R2 Datasheet PDF - WOLFSPEED, INC.


Teilenummer	PTRA087008NB-V1-R2

Download	PTRA087008NB-V1-R2 Click to download

Filegröße	731.2 Kbytes

Page	11 Pages

Hersteller	WOLFSPEED [WOLFSPEED, INC.]

Direct Link	https://www.wolfspeed.com/

Logo

Bauteilbeschribung	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz

PTRA087008NB-V1-R2 Datenblatt (HTML) - WOLFSPEED, INC.

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PTRA087008NB-V1-R2 Produktdetails

Description
The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multistandard cellular power amplifier applications from 755 MHz to 805 MHz.
Manufactured with Wolfspeed’s advanced LDMOS process, this device provides
excellent thermal performance and superior reliability
Features
• Broadband internal input and output matching
• Asymmetric design
- Main: P1dB = 245 W Typ
- Peak: P1dB = 380 W Typ
• Typical pulsed CW performance, 805 MHz, 48 V,
Doherty configuration
- Output power at P3dB = 650 W
- Efficiency = 52%
- Gain = 19.5 dB
• Capable of handling 10:1 VSWR @48 V, 30 W
(WCDMA) output power
• Human Body Model Class 2 (per ANSI/ESDA/JEDEC
JS-001)
• Integrated ESD protection
• Low thermal resistance
• RoHS-compliant

Ähnliche Teilenummer - PTRA087008NB-V1-R2

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Cree, Inc	PTRA087008NB	660Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 ??805 MHz

Ähnliche Beschreibung - PTRA087008NB-V1-R2

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Infineon Technologies A...	PTVA084007NF	491Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ??805 MHz Rev. 03, 2017-08-30
	PTRA083818NF	481Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 ??805 MHz Rev. 05.1, 2017-03-30
	PTRA093818NF	470Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz Rev. 05.1, 2017-08-16
Cree, Inc	PTVA082407NF	639Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz
	PTVA084007NF	486Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ??805 MHz
	PTRA083818NF	606Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 ??805 MHz
	PTRA084808NF	649Kb / 12P	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 ??821 MHz
	PTRA087008NB	660Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 ??805 MHz
WOLFSPEED, INC.	PTRA083818NF	708Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 – 805 MHz Rev. 06.2, 2022-1-27
WOLFSPEED, INC.	PTVA084007NF	497Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 – 805 MHz Rev. 04.2, 2022-02-13

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