SS411A Datenblatt(PDF) - Honeywell Solid State Electronics Center

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SS411A Datenblatt (PDF) - Honeywell Solid State Electronics Center

SS411A Datasheet PDF - Honeywell Solid State Electronics Center


Teilenummer	SS411A

Download	SS411A Download

Filegröße	245.95 Kbytes

Page	3 Pages

Hersteller	HONEYWELL [Honeywell Solid State Electronics Center]

Direct Link	http://honeywell.com/Pages/Home.aspx

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Bauteilbeschribung

Interactive Catalog Replaces Catalog Pages

SS411A Datasheet (PDF)

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SS411A Datasheet PDF - Honeywell Solid State Electronics Center


Teilenummer	SS411A

Download	SS411A Click to download

Filegröße	245.95 Kbytes

Page	3 Pages

Hersteller	HONEYWELL [Honeywell Solid State Electronics Center]

Direct Link	http://honeywell.com/Pages/Home.aspx

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Bauteilbeschribung	Interactive Catalog Replaces Catalog Pages

SS411A Datenblatt (HTML) - Honeywell Solid State Electronics Center

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Über Honeywell Solid State Electronics Center

Honeywell Solid State Electronics Center (SSEC) was a research and development facility of Honeywell Inc. that operated from 1957 to 1993 in Minneapolis, Minnesota, United States. The center was dedicated to the research, development, and production of solid-state electronics, including microelectronics, semiconductors, and related technologies.

During its operation, SSEC made significant contributions to the advancement of the semiconductor industry, particularly in the areas of integrated circuits, transistor design, and fabrication processes. Notable accomplishments of SSEC include the development of the first silicon transistor, the first commercial silicon planar transistor, and the first integrated circuit to use metal oxide semiconductor (MOS) technology.

In 1993, Honeywell closed the SSEC facility as part of a broader restructuring of its operations. The company's semiconductor business was subsequently sold to SGS-Thomson (now STMicroelectronics) in 1999.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.

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