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74HCT30-Q100 Datenblatt (PDF) - Nexperia B.V. All rights reserved

74HCT30-Q100 Datasheet PDF - Nexperia B.V. All rights reserved
Teilenummer 74HCT30-Q100
Download  74HCT30-Q100 Download
Filegröße   229.61 Kbytes
Page   13 Pages
Hersteller  NEXPERIA [Nexperia B.V. All rights reserved]
Direct Link  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Bauteilbeschribung 8-input NAND gate

74HCT30-Q100 Datasheet (PDF)

Go To PDF Page Download Datenblatt
74HCT30-Q100 Datasheet PDF - Nexperia B.V. All rights reserved

Teilenummer 74HCT30-Q100
Download  74HCT30-Q100 Click to download

Filegröße   229.61 Kbytes
Page   13 Pages
Hersteller  NEXPERIA [Nexperia B.V. All rights reserved]
Direct Link  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Bauteilbeschribung 8-input NAND gate

74HCT30-Q100 Datenblatt (HTML) - Nexperia B.V. All rights reserved


74HCT30-Q100 Produktdetails

1. General description
The 74HC30-Q100; 74HCT30-Q100 is an 8-input NAND gate. Inputs include clamp diodes. This
enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100
(Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
• Automotive product qualification in accordance with AEC-Q100 (Grade 1)
• Specified from -40 °C to +85 °C and from -40 °C to +125 °C
• Wide supply voltage range from 2.0 V to 6.0 V
• CMOS low power dissipation
• High noise immunity
• Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
• Complies with JEDEC standards:
• JESD8C (2.7 V to 3.6 V)
• JESD7A (2.0 V to 6.0 V)
• Input levels:
• For 74HC30-Q100: CMOS level
• For 74HCT30-Q100: TTL level
• ESD protection:
• MIL-STD-883, method 3015 exceeds 2000 V
• HBM JESD22-A114F exceeds 2000 V
• MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 Ω)




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