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PMDXB600UNE Datenblatt (PDF) - Nexperia B.V. All rights reserved

PMDXB600UNE Datasheet PDF - Nexperia B.V. All rights reserved
Teilenummer PMDXB600UNE
Download  PMDXB600UNE Download
Filegröße   734.63 Kbytes
Page   15 Pages
Hersteller  NEXPERIA [Nexperia B.V. All rights reserved]
Direct Link  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Bauteilbeschribung 20 V, dual N-channel Trench MOSFET

PMDXB600UNE Datasheet (PDF)

Go To PDF Page Download Datenblatt
PMDXB600UNE Datasheet PDF - Nexperia B.V. All rights reserved

Teilenummer PMDXB600UNE
Download  PMDXB600UNE Click to download

Filegröße   734.63 Kbytes
Page   15 Pages
Hersteller  NEXPERIA [Nexperia B.V. All rights reserved]
Direct Link  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Bauteilbeschribung 20 V, dual N-channel Trench MOSFET

PMDXB600UNE Datenblatt (HTML) - Nexperia B.V. All rights reserved


PMDXB600UNE Produktdetails

1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
• Exposed drain pad for excellent thermal conduction
• ElectroStatic Discharge (ESD) protection > 1 kV HBM
• Drain-source on-state resistance RDSon = 470 mΩ
3. Applications
• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits




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