Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

General features
■ NPN Transistor
■ High voltage capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
■ Fully characterized at 125 °C
■ In compliance with the 2002/93/EC European Directive

Applications
■ Electronic ballast for fluorescent lighting
■ Dedicated for PFC solution in HF ballast half bridge voltage fed