Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.

General features

■ Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range

■ High voltage capability

■ Integrated free-wheeling diode

■ Low spread of dynamic parameters

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

■ Fully characterized at 125 °C

■ Large RBSOA

■ In compliance with the 2002/93/EC European Directive

Applications

■ Electronic transformers for halogen lamps

■ Switch mode power supplies