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SST25VF080B Datenblatt (PDF) - Microchip Technology

SST25VF080B Datasheet PDF - Microchip Technology
Teilenummer SST25VF080B
Download  SST25VF080B Download
Filegröße   1589.28 Kbytes
Page   33 Pages
Hersteller  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology
Bauteilbeschribung 8-Mbit SPI Serial Flash

SST25VF080B Datasheet (PDF)

Go To PDF Page Download Datenblatt
SST25VF080B Datasheet PDF - Microchip Technology

Teilenummer SST25VF080B
Download  SST25VF080B Click to download

Filegröße   1589.28 Kbytes
Page   33 Pages
Hersteller  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology
Bauteilbeschribung 8-Mbit SPI Serial Flash

SST25VF080B Datenblatt (HTML) - Microchip Technology


SST25VF080B Produktdetails

Description
25 series Serial Flash family features a four-wire,
SPI-compatible interface that allows for a low pin-count
package which occupies less board space and ultimately
lowers total system costs. The SST25VF080B
devices are enhanced with improved operating frequency
and lower power consumption. SST25VF080B
SPI serial flash memories are manufactured with proprietary,
high-performance CMOS SuperFlash® technology.
The split-gate cell design and thick-oxide
tunneling injector attain better reliability and manufacturability
compared with alternate approaches.
The SST25VF080B devices significantly improve performance
and reliability, while lowering power consumption.
The devices write (program or erase) with a
single power supply of 2.7V-3.6V for SST25VF080B.
The total energy consumed is a function of the applied
voltage, current, and time of application. Since for any
given voltage range, the SuperFlash technology uses
less current to program and has a shorter erase time,
the total energy consumed during any erase or program
operation is less than alternative flash memory technologies.

Features
• Single Voltage Read and Write Operations
- 2.7V-3.6V
• Serial Interface Architecture:
- SPI Compatible: Mode 0 and Mode 3
• High-Speed Clock Frequency:
- Up to 66 MHz
• Superior Reliability:
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
• Low-Power Consumption:
- Active Read Current: 10 mA (typical)
- Standby Current: 5 μA (typical)
• Flexible Erase Capability:
- Uniform 4-Kbyte sectors
- Uniform 32-Kbyte overlay blocks
- Uniform 64-Kbyte overlay blocks
• Fast Erase and Byte Program:
- Chip Erase Time: 35 ms (typical)
- Sector/Block Erase Time: 18 ms (typical)
- Byte Program Time: 7 μs (typical)
• Auto Address Increment (AAI) Programming:
- Decrease total chip programming time over
Byte Program operations
• End of Write Detection:
- Software polling the BUSY bit in STATUS
Register
- Busy Status readout on SO pin in AAI Mode
• Hold Pin (HOLD#):
- Suspends a serial sequence to the memory
without deselecting the device
• Write Protection (WP#):
- Enables/Disables the Lock-Down function of
the STATUS register
• Software Write Protection:
- Write protection through Block Protection bits
in STATUS register
• Temperature Range:
- Commercial: 0°C to +70°C
- Industrial: -40°C to +85°C
• All devices are RoHS compliant




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Über Microchip Technology


Die Microchip -Technologie ist eine amerikanische Halbleiterfirma, die 1989 gegründet wurde.
Das Unternehmen bietet eine breite Palette von Mikrocontrollern, Analog-, Speicher- und Sicherheitsprodukten für verschiedene Anwendungen in den Märkten Automobil-, Industrie- und Verbrauchermärkte.
Microchip ist einer der größten Mikrocontroller-Lieferanten der Welt und ist bekannt für sein Know-how in Bezug auf das Design mit geringer Leistung und deren Fokus auf energiesparende Technologien.
Das Unternehmen bietet auch Entwicklungstools und Software an, um Kunden dabei zu helfen, ihre Produkte zu entwerfen und zu prototypisieren.
Microchip ist in über 70 Ländern betrieben und seine Produkte werden in einer Vielzahl von Anwendungen verwendet.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.




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