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MMBZ12VALT1G Datenblatt (PDF) - Guangdong Youtai Semiconductor Co., Ltd.

MMBZ12VALT1G Datasheet PDF - Guangdong Youtai Semiconductor Co., Ltd.
Teilenummer MMBZ12VALT1G
Download  MMBZ12VALT1G Download
Filegröße   546.82 Kbytes
Page   5 Pages
Hersteller  UMW [Guangdong Youtai Semiconductor Co., Ltd.]
Direct Link  https://www.umw-ic.com/
Logo UMW - Guangdong Youtai Semiconductor Co., Ltd.
Bauteilbeschribung Common Anode Zeners for ESD Protection

MMBZ12VALT1G Datasheet (PDF)

Go To PDF Page Download Datenblatt
MMBZ12VALT1G Datasheet PDF - Guangdong Youtai Semiconductor Co., Ltd.

Teilenummer MMBZ12VALT1G
Download  MMBZ12VALT1G Click to download

Filegröße   546.82 Kbytes
Page   5 Pages
Hersteller  UMW [Guangdong Youtai Semiconductor Co., Ltd.]
Direct Link  https://www.umw-ic.com/
Logo UMW - Guangdong Youtai Semiconductor Co., Ltd.
Bauteilbeschribung Common Anode Zeners for ESD Protection

MMBZ12VALT1G Datenblatt (HTML) - Guangdong Youtai Semiconductor Co., Ltd.


MMBZ12VALT1G Produktdetails

DESCRIPTION
The dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices ideal for situations where board space is at a premium.

FEATURES
SOT-23 package allows either two separate unidirectional configurations or a single bidirectional configuration.
Working peak reverse voltage 3V to 22V
Standard Zener breakdown voltage 5.6V to 27V
Peak power 24 or Watts @ 1.0ms (unidirectional) per Figure 6 Waveform
ESD Rating:
Class 3B (>16kV) per the Human Body Model
Class C (>400V) per Machine Model
ESD Rating of IEC61000-4-2 level 4, ±30kV contact Discharge
Low leakage < 5.0μA

APPLICATIONS
Computers
Printers
Business Machines
Communication systems
Medical equipment




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