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AM29DL800BT90ED Datenblatt (PDF) - Advanced Micro Devices

AM29DL800BT90ED Datasheet PDF - Advanced Micro Devices
Teilenummer AM29DL800BT90ED
Download  AM29DL800BT90ED Download

Filegröße   1381.96 Kbytes
Page   46 Pages
Hersteller  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices
Bauteilbeschribung 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

AM29DL800BT90ED Datasheet (PDF)

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AM29DL800BT90ED Datasheet PDF - Advanced Micro Devices

Teilenummer AM29DL800BT90ED
Download  AM29DL800BT90ED Click to download

Filegröße   1381.96 Kbytes
Page   46 Pages
Hersteller  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices
Bauteilbeschribung 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

AM29DL800BT90ED Datenblatt (HTML) - Advanced Micro Devices

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AM29DL800BT90ED Produktdetails

GENERAL DESCRIPTION
The Am29DL800B is an 8 Mbit, 3.0 volt-only flash memory device, organized as 524,288 words or 1,048,576 bytes. The device is offered in 44-pin SO, 48-pin TSOP, and 48-ball FBGA packages. The word wide (x16) data appears on DQ0–DQ15; the byte-wide (x8) data appears on DQ0–DQ7. This device requires only a single 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.

DISTINCTIVE CHARACTERISTICS
■ Simultaneous Read/Write operations
    — Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
    — Zero latency between read and write operations
    — Read-while-erase
    — Read-while-program
■ Single power supply operation
    — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
■ Manufactured on 0.35 µm process technology
    — Compatible with 0.5 µm Am29DL800 device
■ High performance
    — Access times as fast as 70 ns
■ Low current consumption (typical values at 5 MHz)
    — 7 mA active read current
    — 21 mA active read-while-program or read-whileerase current
    — 17 mA active program-while-erase-suspended current
    — 200 nA in standby mode
    — 200 nA in automatic sleep mode
    — Standard tCE chip enable access time applies to transition from automatic sleep mode to active mode
■ Flexible sector architecture
    — Two 16 Kword, two 8 Kword, four 4 Kword, and fourteen 32 Kword sectors in word mode
    — Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and fourteen 64 Kbyte sectors in byte mode
    — Any combination of sectors can be erased
    — Supports full chip erase
■ Unlock Bypass Program Command
    — Reduces overall programming time when issuing multiple program command sequences
■ Sector protection
    — Hardware method of locking a sector to prevent any program or erase operation within that sector
    — Sectors can be locked in-system or via programming equipment
    — Temporary Sector Unprotect feature allows code changes in previously locked sectors
■ Top or bottom boot block configurations available
■ Embedded Algorithms
    — Embedded Erase algorithm automatically pre-programs and erases sectors or entire chip
    — Embedded Program algorithm automatically programs and verifies data at specified address
■ Minimum 1,000,000 program/erase cycles guaranteed per sector
■ Package options
    — 44-pin SO
    — 48-pin TSOP
    — 48-ball FBGA
■ Compatible with JEDEC standards
    — Pinout and software compatible with single-power-supply flash standard
    — Superior inadvertent write protection
■ Data# Polling and Toggle Bits
    — Provides a software method of detecting program or erase cycle completion
■ Ready/Busy# output (RY/BY#)
    — Hardware method for detecting program or erase cycle completion
■ Erase Suspend/Erase Resume
    — Suspends or resumes erasing sectors to allow reading and programming in other sectors
    — No need to suspend if sector is in the other bank
■ Hardware reset pin (RESET#)
    — Hardware method of resetting the device to reading array data




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Über Advanced Micro Devices


Advanced Micro Devices, Inc. (AMD) ist eine amerikanische multinationale Halbleiterfirma mit Sitz in Santa Clara, Kalifornien.
Es ist ein führender Hersteller von Mikroprozessoren, Grafikprozessoren und Computersystemen für Verbraucher-, Handels- und Berufsmärkte.
AMD ist bekannt für seine wettbewerbsfähigen CPU -Angebote, einschließlich der Ryzen- und EPYC -Prozessorlinien sowie der Radeon -Grafikprodukte.
AMD wurde 1969 gegründet und hat eine lange Geschichte in der Tech -Branche und war ein wichtiger Akteur in den PC- und Servermärkten.
In den letzten Jahren hat das Unternehmen seine Produktangebote erweitert, um die wachsende Nachfrage nach Rechenleistung in Rechenzentren, Spielen und künstlichen Intelligenz zu befriedigen.
Mit dem Fokus auf Innovation und fortschrittliche Technologie strebt AMD seinen Kunden auf der ganzen Welt Hochleistungs-Computing-Lösungen an.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.




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