| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Toshiba Semiconductor |
TLP2301
|
307Kb / 11P |
Collector-emitter voltage - 40 V (min)
|
 Inchange Semiconductor ... |
2SA651
|
69Kb / 2P |
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.)
|
|
2SB874
|
111Kb / 2P |
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min)
|
|
3DD101A
|
191Kb / 2P |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)
|
|
3DD101B
|
191Kb / 2P |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 150V(Min.)
|
|
3DD15C
|
190Kb / 2P |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 150V(Min.)
|
|
3DD208
|
188Kb / 2P |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 200V(Min.)
|
|
3DD7C
|
191Kb / 2P |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 150V(Min)
|
|
3DD7E
|
191Kb / 2P |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 250V(Min)
|
|
BUY72
|
192Kb / 2P |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 200V(Min.)
|