The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

• Typical 2-Carrier N-CDMA Performance for VDD = 28 Volts,
   IDQ = 850 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
   IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
   1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
   over a 30 kHz Bandwidth at f1 -885 kHz and f2 +885 kHz. Distortion
   Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and
   f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
      Output Power — 18 Watts Avg.
      Power Gain — 14.5 dB
      Efficiency — 25.8%
      ACPR — -51 dB
      IM3 — -37 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 90 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Qualified Up to a Maximum of 32 VDD Operation
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.