Description
The RM110N150T2 uses Super Trench technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
RDS(ON) and Qg. This device is ideal for high-frequency
switching and synchro nous rectification.

General Features
VDS =150V,ID =110A
RDS(ON) <12mÙ @ VGS=10V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
175 °C operating temperature
Pb-free lead plating
100% UIS tested
Halogen-free
RDS(ON) <15mÙ @ VGS=6 V