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TW048Z65C Datenblatt (PDF) - Toshiba Semiconductor
TW048Z65C Datasheet PDF - Toshiba Semiconductor
Teilenummer TW048Z65C
Download  TW048Z65C Download
Filegröße   635.39 Kbytes
Page   12 Pages
Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Bauteilbeschribung MOSFETs Silicon Carbide N-Channel MOS

TW048Z65C Datasheet (PDF)

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TW048Z65C Datasheet PDF - Toshiba Semiconductor

Teilenummer TW048Z65C
Download  TW048Z65C Click to download

Filegröße   635.39 Kbytes
Page   12 Pages
Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Bauteilbeschribung MOSFETs Silicon Carbide N-Channel MOS

TW048Z65C Datenblatt (HTML) - Toshiba Semiconductor


TW048Z65C Produktdetails

Applications
• Switching Voltage Regulators
Features
(1) Chip design of 3rd generation (Built-in SiC schottky barrier diode)
(2) Low diode forward voltage: VDSF = -1.35 V (typ.)
(3) High voltage: VDSS = 650 V
(4) Low drain-source on-resistance: RDS(ON) = 48 mΩ (typ.)
(5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1.6 mA)
(6) Recommended gate - source drive voltage: VGS_on = 18 V, VGS_off = 0 V
(7) Enhancement mode.




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