TAN350 Datenblatt(PDF) - Advanced Power Technology

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TAN350 Datenblatt (PDF) - Advanced Power Technology

TAN350 Datasheet PDF - Advanced Power Technology


Teilenummer	TAN350

Download	TAN350 Download

Filegröße	711.29 Kbytes

Page	4 Pages

Hersteller	ADPOW [Advanced Power Technology]

Direct Link	http://www.advpowertech.com

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Bauteilbeschribung

high power COMMON BASE bipolar transistor.

TAN350 Datasheet (PDF)

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TAN350 Datasheet PDF - Advanced Power Technology


Teilenummer	TAN350

Download	TAN350 Click to download

Filegröße	711.29 Kbytes

Page	4 Pages

Hersteller	ADPOW [Advanced Power Technology]

Direct Link	http://www.advpowertech.com

Logo

Bauteilbeschribung	high power COMMON BASE bipolar transistor.

TAN350 Datenblatt (HTML) - Advanced Power Technology

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TAN350 Produktdetails

GENERAL DESCRIPTION

The TAN350 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.

Ähnliche Teilenummer - TAN350

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
List of Unclassifed Man...	TAN350	117Kb / 3P	350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz

Ähnliche Beschreibung - TAN350

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
GHz Technology	JTDA50	28Kb / 1P	High power COMMON BASE bipolar transistor.
	JTDB25	113Kb / 2P	High power COMMON BASE bipolar transistor.
	JTDB75	233Kb / 3P	High power COMMON BASE bipolar transistor.
Microsemi Corporation	MDS500L	267Kb / 4P	high power COMMON BASE bipolar transistor
Microsemi Corporation	MS2473	110Kb / 2P	high power COMMON BASE bipolar transistor.
GHz Technology	TAN250A	204Kb / 3P	high power COMMON BASE bipolar transistor.
Advanced Power Technolo...	TCS800	282Kb / 4P	high power COMMON BASE bipolar transistor.
GHz Technology	TPR175	276Kb / 3P	high power COMMON BASE bipolar transistor.
GHz Technology	TPR400	274Kb / 3P	high power COMMON BASE bipolar transistor.
Advanced Power Technolo...	TPR700	268Kb / 3P	high power COMMON BASE bipolar transistor.

Über Advanced Power Technology

Advanced Power Technology (APT) is a semiconductor company that designs, manufactures and sells power MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). The company was founded in 1986 and is headquartered in Bend, Oregon, USA.

APT's products are used in a wide range of applications, including automotive, industrial, communications, and consumer electronics. The company offers a wide range of MOSFETs and IGBTs with different voltage and current ratings, package options and other features to meet the specific needs of its customers.

APT is known for its commitment to quality and innovation. The company's products are designed to meet the highest standards of performance and reliability, and are manufactured using the latest technology and materials. APT also offers custom design and engineering services to meet the specific needs of its customers.

APT has a global presence, with sales offices and representatives located around the world. The company is dedicated to delivering innovative and reliable power MOSFETs and IGBTs that meet the evolving needs of the electronics industry. In 2000, APT was acquired by Microsemi Corporation, which later became part of Microchip Technology Inc.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.

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