FEATURES
Integrated dual-channel RF front end
2-stage LNA and high power SPDT switch
On-chip bias and matching
Single supply operation
Gain
High gain mode: 32 dB typical at 3.6 GHz
Low gain mode: 16 dB typical at 3.6 GHz
Low noise figure
High gain mode: 1.45 dB typical at 3.6 GHz
Low gain mode: 1.45 dB typical at 3.6 GHz
High isolation
RXOUT-CHA and RXOUT-CHB: 47 dB typical
TERM-CHA and TERM-CHB: 52 dB typical
Low insertion loss: 0.65 dB typical at 3.6 GHz
High power handling at TCASE = 105°C
Full lifetime
LTE average power (9 dB PAR): 40 dBm
Single event (<10 sec operation)
LTE average power (9 dB PAR): 43 dBm
High OIP3: 32 dBm typical
Power-down mode and low gain mode for LNA
Low supply current
High gain mode: 86 mA typical at 5 V
Low gain mode: 36 mA typical at 5 V
Power-down mode: 12 mA typical at 5 V
Positive logic control
6 mm × 6 mm, 40-lead LFCSP package
APPLICATIONS
Wireless infrastructure
TDD massive multiple input and multiple output and active antenna systems
TDD-based communication systems