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PBSS303NZ-Q Datenblatt (PDF) - Nexperia B.V. All rights reserved
PBSS303NZ-Q Datasheet PDF - Nexperia B.V. All rights reserved
Teilenummer PBSS303NZ-Q
Download  PBSS303NZ-Q Download
Filegröße   273.49 Kbytes
Page   14 Pages
Hersteller  NEXPERIA [Nexperia B.V. All rights reserved]
Direct Link  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Bauteilbeschribung 30 V, 5.5 A NPN low VCEsat transistor

PBSS303NZ-Q Datasheet (PDF)

Go To PDF Page Download Datenblatt
PBSS303NZ-Q Datasheet PDF - Nexperia B.V. All rights reserved

Teilenummer PBSS303NZ-Q
Download  PBSS303NZ-Q Click to download

Filegröße   273.49 Kbytes
Page   14 Pages
Hersteller  NEXPERIA [Nexperia B.V. All rights reserved]
Direct Link  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Bauteilbeschribung 30 V, 5.5 A NPN low VCEsat transistor

PBSS303NZ-Q Datenblatt (HTML) - Nexperia B.V. All rights reserved


PBSS303NZ-Q Produktdetails

1. General description
NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic
package.
PNP complement: PBSS303PZ-Q

2. Features and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain (hFE) at high IC
• High efficiency due to less heat generation
• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications
• DC-to-DC conversion
• MOSFET gate driving
• Motor control
• Charging circuits
• Power switches (e.g. motors, fans)




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