General Description [1]
The CY7C197BN is a high performance CMOS Asynchronous SRAM organized as 256K × 1 bits that supports an asynchronous memory interface. The device features an automatic power down feature that significantly reduces power consumption when deselected

Features
• Fast access time: 12 ns
• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)
• CMOS for optimum speed and power
• TTL compatible inputs and outputs
• Available in 24-lead DIP and 24-lead SOJ