Functional Description[1]
The CY7C1326H SRAM integrates 128K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation.

Features
• Registered inputs and outputs for pipelined operation
• 128K × 18 common I/O architecture
• 3.3V core power supply
• 3.3V/2.5V I/O operation
• Fast clock-to-output times
   — 3.5 ns (for 166-MHz device)
   — 4.0 ns (for 133-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous output enable
• Offered in JEDEC-standard lead-free 100-pin TQFP package
• “ZZ” Sleep Mode Option