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PM50CSD120 Datenblatt (PDF) - Mitsubishi Electric Semiconductor

PM50CSD120 Datasheet PDF - Mitsubishi Electric Semiconductor
Teilenummer PM50CSD120
Download  PM50CSD120 Download
Filegröße   133.63 Kbytes
Page   8 Pages
Hersteller  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor
Bauteilbeschribung FLAT-BASE TYPE INSULATED PACKAGE

PM50CSD120 Datasheet (PDF)

Go To PDF Page Download Datenblatt
PM50CSD120 Datasheet PDF - Mitsubishi Electric Semiconductor

Teilenummer PM50CSD120
Download  PM50CSD120 Click to download

Filegröße   133.63 Kbytes
Page   8 Pages
Hersteller  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor
Bauteilbeschribung FLAT-BASE TYPE INSULATED PACKAGE

PM50CSD120 Datenblatt (HTML) - Mitsubishi Electric Semiconductor


PM50CSD120 Produktdetails

FEATURE
a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
b) Using new Diode which is designed to get soft reverse recovery characteristics.
c) Keeping the package compatibility.
   The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.
• 3φ 50A, 1200V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over current, short-circuit, over-temperature & under-voltage (P-Fo available from upper leg devices)
• Acoustic noise-less 5.5/7.5kW class inverter application
• UL Recognized Yellow Card No.E80276(N) File No.E80271

APPLICATION
  General purpose inverter, servo drives and other motor controls





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