1 Features
• Stable with 1μF or larger ceramic output capacitor
• Input voltage range: 2.2V to 5.5V
• Ultra-low dropout voltage
– Legacy silicon: 130mV typical at 1A
– New silicon: 122mV typical at 1A
• Excellent load transient response—even with only
1μF output capacitor
• NMOS topology delivers low reverse leakage
current
• Initial accuracy: 1%
• Overall accuracy over line, load, and temperature
– Legacy silicon: 3%
– New silicon: 1.5%
• Less than 20nA typical IQ in shutdown mode
• Thermal shutdown and current limit for fault
protection
• Available in multiple output voltage versions:
– Adjustable output: 1.20V to 5.5V
– Custom outputs available using factory
package-level programming

2 Applications
• Point-of-load regulation for DSPs, FPGAs, ASICs,
and microprocessors
• Post-regulation for switching supplies
• Portable and battery-powered equipment

3 Description
The TPS737 linear low-dropout (LDO) voltage
regulator uses an NMOS pass transistor in a voltagefollower
configuration. This topology is relatively
insensitive to the output capacitor value and ESR,
allowing for a wide variety of load configurations. Load
transient response is excellent, even with a small 1μF
ceramic output capacitor. The NMOS topology also
allows for very low dropout.
The TPS737 uses an advanced BiCMOS process to
yield high precision while delivering very low dropout
voltages and low ground pin current. Devices that use
the latest manufacturing flow have an updated design
with new silicon on the latest TI process technology.
Current consumption, when not enabled, is less than
20nA and is designed for portable applications. This
device is protected by thermal shutdown and foldback
current limit.
For applications that require higher output voltage
accuracy, consider TI's TPS7A37 1% overall
accuracy, 1A low-dropout voltage regulator.