RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.

GSM Application
• Typical GSM Performance: VDD = 26 Volts, IDQ = 600 mA, Pout = 80 Watts CW, Full Frequency Band (869-894 MHz or 921-960 MHz).
    Power Gain — 18.5 dB
    Drain Efficiency — 60%

GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 550 mA, Pout = 36 Watts Avg., Full Frequency Band (869-894 MHz or 921-960 MHz).
    Power Gain — 19 dB
    Drain Efficiency — 42%
    Spectral Regrowth @ 400 kHz Offset = -63 dBc
    Spectral Regrowth @ 600 kHz Offset = -78 dBc
    EVM — 2.5% rms
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW Output Power

Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.