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STAV36200AY2 Datenblatt (PDF) - Innogration Technologies, Inc.
STAV36200AY2 Datasheet PDF - Innogration Technologies, Inc.
Teilenummer STAV36200AY2
Download  STAV36200AY2 Download
Filegröße   966.54 Kbytes
Page   6 Pages
Hersteller  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Bauteilbeschribung Gallium Nitride 50V, 200W,3.3-3.6GHz RF Power Transistor

STAV36200AY2 Datasheet (PDF)

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STAV36200AY2 Datasheet PDF - Innogration Technologies, Inc.

Teilenummer STAV36200AY2
Download  STAV36200AY2 Click to download

Filegröße   966.54 Kbytes
Page   6 Pages
Hersteller  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Bauteilbeschribung Gallium Nitride 50V, 200W,3.3-3.6GHz RF Power Transistor

STAV36200AY2 Datenblatt (HTML) - Innogration Technologies, Inc.


STAV36200AY2 Produktdetails

Description
The STAV36200AY2 is a single ended 200watt, GaN HEMT, ideal for applications from 3.3 to 3.6GHz.
It is an input matched transistor capable of delivering Psat 225W.
It can support CW, pulse or any modulated signal.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 Sub-4GHz pulse or CW amplifier
 5G base station amplifier




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