STAV40055C6 Datenblatt(PDF)

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STAV40055C6 Datenblatt (PDF) - Innogration Technologies, Inc.

STAV40055C6 Datasheet PDF - Innogration Technologies, Inc.


Teilenummer	STAV40055C6

Download	STAV40055C6 Download

Filegröße	1222.28 Kbytes

Page	5 Pages

Hersteller	INNOGRATION [Innogration Technologies, Inc.]

Direct Link	http://www.innogration.net/index.htm

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Bauteilbeschribung

Gallium Nitride 50V, 55W, 3.4-4GHz RF Power Transistor

STAV40055C6 Datasheet (PDF)

Download Datenblatt


Teilenummer	STAV40055C6

Download	STAV40055C6 Click to download

Filegröße	1222.28 Kbytes

Page	5 Pages

Hersteller	INNOGRATION [Innogration Technologies, Inc.]

Direct Link	http://www.innogration.net/index.htm

Logo

Bauteilbeschribung	Gallium Nitride 50V, 55W, 3.4-4GHz RF Power Transistor

STAV40055C6 Datenblatt (HTML) - Innogration Technologies, Inc.

STAV40055C6 Datasheet HTML 1Page - Innogration Technologies, Inc.

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STAV40055C6 Datasheet HTML 3Page - Innogration Technologies, Inc.

STAV40055C6 Datasheet HTML 4Page - Innogration Technologies, Inc.

STAV40055C6 Datasheet HTML 5Page - Innogration Technologies, Inc.

STAV40055C6 Produktdetails

Description
The STAV40050BY4V is a 55-watt, internally matched GaN HEMT, designed for 5G cellular
applications with frequencies from 3.4-4GHz.It can be configured as asymmetrical Doherty for
4G or 5G application, delivering 8 to 9W average power, according to normal 8 to 9dB back off.
There is no guarantee of performance when this part is used in applications designed Outside
of these frequencies.

Applications
 5G, 4G wireless infrastructure
 Wideband or narrowband power amplifier
 Test instruments
 S band power amplifier

Ähnliche Beschreibung - STAV40055C6

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