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STAV50050C6 Datenblatt (PDF) - Innogration Technologies, Inc.

STAV50050C6 Datasheet PDF - Innogration Technologies, Inc.
Teilenummer STAV50050C6
Download  STAV50050C6 Download
Filegröße   1048.65 Kbytes
Page   4 Pages
Hersteller  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Bauteilbeschribung Gallium Nitride 50V, 50W, 4-5GHz RF Power Transistor

STAV50050C6 Datasheet (PDF)

Go To PDF Page Download Datenblatt
STAV50050C6 Datasheet PDF - Innogration Technologies, Inc.

Teilenummer STAV50050C6
Download  STAV50050C6 Click to download

Filegröße   1048.65 Kbytes
Page   4 Pages
Hersteller  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Bauteilbeschribung Gallium Nitride 50V, 50W, 4-5GHz RF Power Transistor

STAV50050C6 Datenblatt (HTML) - Innogration Technologies, Inc.


STAV50050C6 Produktdetails

Description
The STAV50050C6 is a 50watt, GaN HEMT, ideal for general applications from 4 to 5GHz.
It features high gain, wide band and low cost, in 10*6mm plastic open cavity package, enabling
surface mounted on PCB through grounding vias or soldered on heatsink directly.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 5G wireless infrastructure
 Wideband or narrowband power amplifier
 C band pulsed amplifier




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