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STBV18200BY4 Datenblatt (PDF) - Innogration Technologies, Inc.
STBV18200BY4 Datasheet PDF - Innogration Technologies, Inc.
Teilenummer STBV18200BY4
Download  STBV18200BY4 Download
Filegröße   1638.51 Kbytes
Page   6 Pages
Hersteller  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Bauteilbeschribung Gallium Nitride 50V, 200W,1.3-1.8GHz RF Power Transistor

STBV18200BY4 Datasheet (PDF)

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STBV18200BY4 Datasheet PDF - Innogration Technologies, Inc.

Teilenummer STBV18200BY4
Download  STBV18200BY4 Click to download

Filegröße   1638.51 Kbytes
Page   6 Pages
Hersteller  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Bauteilbeschribung Gallium Nitride 50V, 200W,1.3-1.8GHz RF Power Transistor

STBV18200BY4 Datenblatt (HTML) - Innogration Technologies, Inc.


STBV18200BY4 Produktdetails

Description
The STBV18200BY4 is a 200watt Doherty pair capable, GaN HEMT, ideal for for 4G/5G cellular
applications from 1.3 to 1.8GHz..
It can be configured as asymmetrical Doherty delivering 80W average power, according to normal
8dB back off.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 Asymmetrical Doherty amplifier
 L band power amplifier




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