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STCV10700BY4 Datenblatt (PDF) - Innogration Technologies, Inc.
STCV10700BY4 Datasheet PDF - Innogration Technologies, Inc.
Teilenummer STCV10700BY4
Download  STCV10700BY4 Download
Filegröße   1459.12 Kbytes
Page   6 Pages
Hersteller  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Bauteilbeschribung Gallium Nitride 50V, 700W,0.6-1GHz RF Power Transistor

STCV10700BY4 Datasheet (PDF)

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STCV10700BY4 Datasheet PDF - Innogration Technologies, Inc.

Teilenummer STCV10700BY4
Download  STCV10700BY4 Click to download

Filegröße   1459.12 Kbytes
Page   6 Pages
Hersteller  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Bauteilbeschribung Gallium Nitride 50V, 700W,0.6-1GHz RF Power Transistor

STCV10700BY4 Datenblatt (HTML) - Innogration Technologies, Inc.


STCV10700BY4 Produktdetails

Description
The STCV10700BY4 is a dual path 700watt capable, GaN HEMT, ideal for applications from 0.6 to 1GHz.
It can support CW, pulse or any modulated signal. It can be configured as push pull or Doherty.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 Asymmetrical Doherty amplifier within 0.6-1GHz
 UHF TV
 P band power amplifier




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